| PART |
Description |
Maker |
| SPLE10N94G2 |
Actively Cooled Diode Laser Bar, 600 W cw at 940 nm
|
OSRAM GmbH
|
| SPLE10N81G2 |
Actively Cooled Diode Laser Bar, 600 W cw at 808 nm
|
OSRAM GmbH
|
| SPLE20N81G2 |
Actively Cooled Diode Laser Bar, 1200 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMY81X2 |
Passively Cooled Diode Laser Bar, 35 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMN91G2 |
Passively Cooled Diode Laser Bar, 50 W cw at 915 nm
|
OSRAM GmbH
|
| SPLMN94X2 |
Passively Cooled Diode Laser Bar, 40 W cw at 940 nm
|
OSRAM GmbH
|
| SPLMN81S9 |
Passively Cooled Diode Laser Bar, 150 W qcw at 808 nm
|
OSRAM GmbH
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
| NX8349TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
